cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 1/9 MTN7478Q8 cy s t ek product s pecification n-channel logic level enhancement mode mosfet MTN7478Q8 features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plating and halogen-free package symbol outline MTN7478Q8 sop-8 pin 1 g gate d drain s source ordering information device package shipping MTN7478Q8-0-t3-g sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel bv dss 60v i d 7a r dson @v gs =10v, i d =7a 14m (typ.) r dson @v gs =4.5v, i d =5a 16m (typ.) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name http://
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 2/9 MTN7478Q8 cy s t ek product s pecification absolute maximum ratings (tc=25 c, unless otherwise noted) parameter symbol limits unit drain-source v o ltage v ds 60 gate-source voltage v gs 20 v continuous drain current @ t a =25 c 7 continuous drain current @ t a =100 c i d 4.4 pulsed drain current i dm 30 *1 avalanche current i as 7 a avalanche energy @ l=1mh, i d =4.2a, r g =25 e as 15 repetitive avalanche energy @ l=0.05mh e ar 0.3 *2 mj t a =25 2.5 *3 total power dissipation t a =100 p d 1 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 25 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface m ounted on 1 in2 copper pad of fr-4 board, 125 c / w when m ount ed on m i ni m u m copper pad characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs =0v, i d =250 a v gs(th) 1.0 1.6 2.5 v v ds = v gs , i d =250 a g fs *1 - 20 - s v ds =5v, i d =7a i gss - - 100 na v gs = 20v - - 1 v ds =48v, v gs =0v i dss - - 25 a v ds =48v, v gs =0v, t j =125 c - 14 20 m v gs =10v, i d =7a r ds(on) *1 - 16 25 m v gs =4.5v, i d =5a dynamic ciss - 2815 - coss - 104 - crss - 85 - pf v gs =0v, v ds =25v, f=1mhz
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 3/9 MTN7478Q8 cy s t ek product s pecification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg *1, 2 - 29 - qgs *1, 2 - 8.9 - qgd *1, 2 - 9.3 - nc v ds =48v, v gs =4.5v, i d =7a t d(on) *1, 2 - 17 - tr *1, 2 - 7 - t d(off) *1, 2 - 72 - t f *1, 2 - 12 - ns v ds =30v, i d =7a, v gs =10v, r gs =6.2 source-drain diode i s *1 - - 2.3 i sm *3 - - 9.2 a v sd *1 - 0.78 1.2 v i s =7a, v gs =0v trr *1 - 60 - ns qrr *1 - 115 - nc i f =7a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 4/9 MTN7478Q8 cy s t ek product s pecification typical characteristics ty p i cal o u t p u t c h a r act er is tic s 0 5 10 15 20 25 30 35 40 45 50 02 4 6 8 1 0 v ds , d r a i n- s ou r c e v ol t a ge ( v ) i d , d r a i n c u rre n t (a ) 10v, 9v, 8v, 7v, 6v, 5v, 4v v gs =3v brekdown voltage vs ambient temperature 0. 4 0. 6 0. 8 1 1. 2 1. 4 - 75 - 50 - 2 5 0 25 50 7 5 10 0 12 5 150 1 75 t j , j unc t i o n t e m pe r a t ur e ( c ) bv ds s , n o r m al i zed d r ai n - s o u r ce b r e a kdo w n v ol t a ge i d =250 a, v gs =0v s ta t ic d r a in - s o u r c e o n - s t a te r e s is ta n c e v s d r a i n c u r r e n t 10 10 0 10 00 0. 01 0. 1 1 10 1 00 i d , d r a i n c u rre n t (a ) r ds ( o n) , s t a t i c d ra i n -s o u rc e o n -s t a t e r e s i s t an ce ( m ) v gs =2.5v v gs =3 . 5 v 4 . 5 v 1 0 v r e v e r s e d r ai n c u r r e n t v s s o u r ce- d r ain v o lt ag e 0.2 0. 4 0. 6 0. 8 1 1. 2 02 46 8 1 i dr , r e ve r s e d r a i n c ur r e nt ( a ) v sd , s o urc e -d ra i n v o l t a g e (v ) 0 tj=25c tj=150c s t at i c d r a i n - s o u r c e o n - s t at e r e s i s t an ce v s g at e - s o u r ce vo l t a g e 0 10 20 30 40 50 60 70 80 90 100 02 46 8 1 0 d r ai n - s o u r ce o n - s t at e r es i s t an c e v s j u n c t i o n t em p ear t u r e 0 0. 4 0. 8 1. 2 1. 6 2 2. 4 - 7 5 - 50 - 25 0 25 5 0 75 100 12 5 150 175 t j , j unc t i on t e m pe r a t ur e ( c ) r ds ( o n) , no r m a l i z e d s ta tic dr a in - s o u r ce o n - s t a t e r e s i s t an ce v gs , g a t e- s o u r ce v o l t ag e( v ) r ds(on) , static drain-source on- state resistance(m) i d =7a v gs =10v, i d =7a r ds o n @ t j = 25 c : 14 m t yp.
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 5/9 MTN7478Q8 cy s t ek product s pecification typical characteristics(cont.) ca pa c i t a nc e v s d ra i n -t o-s o urc e v ol t a ge 10 10 0 100 0 10000 0 . 1 1 10 100 v ds , d r a i n- s o ur c e v ol t a g e ( v ) c a p a c i t a n c e ---(pf ) c oss ciss crss t h r e s hol d v ol t a ge vs j u nc t i on t e m pe a r t ur e 0.4 0. 6 0. 8 1 1. 2 1. 4 - 75 - 50 - 25 0 25 5 0 75 10 0 125 1 50 175 t j , j unc t i o n t e m pe r a t ur e ( c ) v gs ( t h ) , n o r m a l i z e d t hr e s ho l d v o l t a ge i d =250 a i d =1ma f or w a r d t r a ns f e r a dm i t t a nc e vs d r a i n c ur r e nt 0.01 0. 1 1 10 100 0. 0 01 0 . 0 1 0 . 1 1 10 100 i d , d r a i n c u rre n t (a ) g fs , f o r w ar d t r an s f er a d m i t t an ce( s ) v ds =5v pulsed ta=25c g a t e c h a r g e c h ar a c te r i s t ics 0 2 4 6 8 10 0 1 0 2 03 0 4 0 5 0 6 07 08 0 qg , t o ta l ga te c h a r g e ( n c ) v gs , g a t e - s our c e v ol t a ge ( v ) v ds =48v i d =7a maximum safe operating area 0. 0 1 0. 1 1 10 100 0. 0 1 0. 1 1 10 100 10 00 v ds , d r a i n- s our c e v o l t a g e ( v ) i d , d r a i n c u rre n t ( a ) dc 10ms 100ms 1ms 100 s 1s r ds ( on) limited t a =25c,tj=150c r ja =50c/w, v gs =10 v single pulse maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 25 50 7 5 10 0 1 2 5 1 50 1 75 t j , j u n c t i on t e m p e ra t u re ( c ) i d , m a x i mu m d r a i n c u rre n t ( a ) t a =25c, v gs =10v, r ja =50c/w
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 6/9 MTN7478Q8 cy s t ek product s pecification typical characteristics(cont.) t y p i c a l t ra n s fe r cha r a c t e ri s t i c s 0 5 10 15 20 25 30 012 3 45 v gs , ga te - s o u r c e vo lta g e ( v) i d , dr a i n c u r r e n t ( a) v ds =10v single pulse maximum power dissipation 0 10 0 20 0 30 0 40 0 50 0 0. 0001 0. 001 0. 01 0. 1 1 10 1 00 1000 p u l s e wi dt h( s ) p o w e r (w ) t j(max) =150c t a =25c ja =50c/w t r a n s i e n t t h e r m a l r e s pons e cur v e s 0.001 0. 01 0. 1 1 1 . e - 0 4 1 . e - 0 3 1. e - 02 1. e - 01 1 . e + 00 1 . e + 01 1. e + 0 2 1. e + 0 3 t 1 , s q u a r e w av e p u l s e d u r a t i o n ( s ) r(t ), n o rma l i z e d t ra ns i e n t t h e rma l r e s i s t a n c e single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1. r ja (t )= r( t ) * r ja 2 . d u t y f a c t o r , d = t1 /t2 3. t jm -t a =p dm *r ja (t ) 4.r ja =50c/w
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 7/9 MTN7478Q8 cy s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 8/9 MTN7478Q8 cy s t ek product s pecification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c925q8 issued date : 2014.02.27 revised date : page no. : 9/9 MTN7478Q8 cy s t ek product s pecification sop-8 dimension millimeters inches millimeters 8-lead sop-8 plastic package cystek packa g e code: q8 marking: 7478 data code : first code : last digit of christian year second code : month code : jan a, feb b, mar c, apr d, may e, jun f, jul g, a u g h, sep j, oc t k, nov l, dec m last two codes : production serial code, 01~99 device name inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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